Author:
Özge GÜLÜM
Year:
2021
Abstract:
This master's thesis presents the design and implementation of a bias-adjustable low-noise amplifier (LNA) for Wi-Fi 6 applications using 0.15 µm GaAs pHEMT technology. The proposed study operates in three different frequency configurations: only at 2.4 GHz, only at 5.8 GHz, and simultaneously for the dual band of 2.4–5.8 GHz. Frequency tuning is achieved through two switching transistors in the feedback paths. Apart from the bias source used in the design, no additional voltage source is required, as the frequency adjustment is controlled by the bias voltage applied to the switching transistors.
The designed LNA is fully integrated, requiring no external circuit elements for impedance matching. Electromagnetic (EM) simulation results of the proposed design indicate a gain of 17.33 dB, a noise figure of 2.23 dB, and a P1dB of 8.32 dBm for the 2.4 GHz configuration. Similarly, for the 5.8 GHz configuration, the gain is 18.44 dB, the noise figure is 1.5 dB, and the P1dB is 3.25 dBm. For the simultaneous dual-band configuration of 2.4–5.8 GHz, the EM simulation results show gains of 17.34 dB and 15.79 dB, noise figures of 2.23 dB and 1.62 dB, and P1dB values of 7.77 dBm and 5.34 dBm for 2.4 GHz and 5.8 GHz, respectively.
The power consumption of the LNA chip, designed with a single 3.3 V power supply, is 216 mW. To reduce power consumption, minimize chip area, and improve performance, techniques such as current reuse, automatic biasing, and inductive degeneration were employed in the design. The fabricated chip, including all input and output pads, has dimensions of 3.4 x 1.5 mm². The entire design, simulation, and circuit analysis were conducted in the AWR simulation environment using the WIN-PL1512 design library.
To the best of the author's knowledge, no prior LNA study in the literature combines two different single-frequency applications with a simultaneous dual-band application.