Author:
Cahit Sait Küçük
Year:
2019
Abstract:
In this work, the 0.15 µm GaAs pHEMT process is used, an 8-12 GHz cascode LNA is designed and simulated. The LNA was designed using cascode topology with feedback techniques which increases gain and stability over entire frequency. For the LNA circuits, the gain should be greater than 14 dB. it is desirable that the average s11 is less than -10 dB, s22 is less than -10 dB, OP1dB is more than 10 dBm, and OIP3 is more than 15 dBm. At 8-12 GHz, this amplifier achieves power gain of 17 dB, s11 of -16 dB, s22 of -24 dB, the noise figure of 1 dB, OP1dB of 16.5 dBm, OIP3 of 29.5 dBm. The total current consumption for the LNA is 36.5 mA with an operating voltage supply at 5V. In this project, many topologies and technologies have been examined and compared. Firstly, the S parameters of the sample LNA were examined and the topology was decided to be cascode. The GaAs pHEMT, which is chosen as the technology, has been shown to be the most suitable technology to provide the best stability in addition to being an expensive technology. The EM simulation and layout of this work are made on the AWR Design Environment.