Author:
Muratcan Aydın
Year:
2021
Abstract:
The LNA design in this work is designed and simulated for the K Band (18 - 27 GHz) using 0.15-μm GaAs pHEMT technology. This LNA is designed using cascode topology that provides a more flat gain and a low noise figure at high bandwidth. As a result of the literature review, it has been observed that the gain of LNA circuits operating in K Band is 15 dB and the noise figure is 3 dB. In this design, while the gain increases up to 18 dB, the average is 16 dB, and the lowest noise figure in the frequency range is 2.4 dB. This circuit consumes a total of 107 mA of current from a 3.3 V DC supply. The total size of the circuit is 2.47 mm2 (1.9 mm x 1.3 mm).
Before starting the design, the frequency range in which the circuit will operate was determined first, and as a result of the literature review, the topology of the circuit was accepted as a unique value while designing the circuit with the most rarely used topology in that frequency range. The design was made with the help of GaAs pHEMT technology.
The circuit design, layout design and EM simulations of the work were made on AWR Design Environment.