ABSTRACT
The goal of this project is to design a Power Amplifier with a center frequency of 140GHz operating in D-Band. Before the design, a literature review was conducted, specs were determined, and a suitable topology was found for the circuit. Then, through various analyses, the load and source impedance values required to reach the desired specs were determined and the design is made with ideal components. When the circuit designed with ideal components reached the desired specs, the circuit was implemented and the layout was created. The final specs of the circuit were obtained as ๐๐๐ข๐ก = 12.41 dBm ๐๐บ๐๐๐=13.41 dBm PAE=3.437%. The biggest difficulty encountered while doing the project was that the operating frequency was very close to the ft value of the transistor and meaningless data emerged as a result of some simulations. As a result of the designed layout, the size of the chip was determined as 1.19mm2
. The biggest added value of the project is that it is the only Power Amplifier made at this frequency with this process and that it can be used for 6G communication technologies.
Author
Murat Said Yazฤฑcฤฑ